LA DIFFRAZIONE DEI RAGGI X NELLA CARATTERIZZAZIONE STRUTTURALE DEI MATERIALI. II: TECNICHE SPECIALI ED AVANZATE = LA DIFFRACTION DES RAYONS X DANS LA CARACTERISATION STRUCTURALE DES MATERIAUX. II: TECHNIQUES SPECIALES ET AVANTAGESCELOTTI G.1980; FIS. E TECNOL.; ITA; DA. 1980; VOL. 3; NO 2; PP. 75-96Article

DETERMINAZIONE DEL PARAMETRO RETICOLARE IN CRISTALLI DI SILICIO DROGATI CON BORO E FOSFORO = DETERMINATION DES PARAMETRES CRISTALLINS DANS DES CRISTAUX DE SILICIUM DOPES AVEC DU BORE ET DU PHOSPHORECELOTTI G; ANGELUCCI R.1973; METALLURG. ITAL.; ITAL.; DA. 1973; VOL. 65; NO 1; PP. 23-25; ABS. FR. ANGL. ALLEM.; BIBL. 18 REF.Serial Issue

LATTICE PARAMETER STUDY OF SILICON UNIFORMLY DOPED WITH BORON AND PHOSPHORUS.CELOTTI G; NOBILI D; OSTOJA P et al.1974; J. MATER. SCI.; G.B.; DA. 1974; VOL. 9; NO 5; PP. 821-828; BIBL. 46 REF.Article

THERMAL AND MECHANICAL PROPERTIES OF MULLITIC SUBSTRATES FOR LOW-COST SOLAR CELLS OBTAINED BY DRY-PRESSINGCELOTTI G; MORETTINI L; ORTELLI G et al.1983; JOURNAL OF MATERIALS SCIENCE; ISSN 0022-2461; GBR; DA. 1983; VOL. 18; NO 4; PP. 1005-1014; BIBL. 14 REF.Article

METAL-RICH PD-SILICIDE FORMATION IN THIN-FILM INTERACTIONS = FORMATION DE SILICIURE DE PD RICHE EN METAL PAR INTERACTIONS DE COUCHES MINCESCANALI C; SILVESTRI L; CELOTTI G et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5768-5772; BIBL. 21 REF.Article

THE CRYSTAL SYMMETRY AND POWDER PATTERN OF HEXAMETHYLBENZENE BELOW 116 K.CELOTTI G; BERTINELLI F; STREMMENOS C et al.1975; ACTA CRYSTALLOGR., A; DANEM.; DA. 1975; VOL. 31; NO 5; PP. 582-585; H.T. 1; BIBL. 7 REF.Article

Bi-2223 bulk superconductor with oriented texture and high transport critical currentTAMPIERI, A; CELOTTI, G.Superconductor science & technology (Print). 2000, Vol 13, Num 8, pp 1113-1119, issn 0953-2048Conference Paper

PRE-PRECIPITATION PHENOMENA IN ZN-CD ALLOYSCELOTTI G; MERLI PG; MARTINELLI G et al.1974; J. MATER. SCI.; G.B.; DA. 1974; VOL. 9; NO 8; PP. 1380-1382; BIBL. 10 REF.Article

A misunderstood member of the nagelschmidtite family unveiled: structure of Ca₅Na₂(PO₄)₄ from X-ray powder diffraction dataCELOTTI, G; LANDI, E.Journal of the European Ceramic Society. 2003, Vol 23, Num 6, pp 851-858, issn 0955-2219, 8 p.Article

PHASE DIAGRAMS AND METAL-RICH SILICIDE FORMATIONCANALI C; MAJNI G; OTTAVIANI G et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 1; PP. 255-258; BIBL. 14 REF.Article

Structural data from X-ray powder diffraction of a new phase formed in the Si₃N₄-La₂O₃-Y₂O₃ system after oxidation in airMONTEVERDE, F; CELOTTI, G.Journal of the European Ceramic Society. 1999, Vol 19, Num 11, pp 2021-2026, issn 0955-2219Article

INTERDIFFUSION AND COMPOUND FORMATION IN THE C-SI/PTSI/(TI-W)/AL SYSTEM = INTERDIFFUSION ET FORMATION DE COMPOSES DANS LE SYSTEME SI CRISTALLIN/PTSI/(TI-W)/ALCANALI C; CELOTTI G; FANTINI F et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 88; NO 1; PP. 9-23; BIBL. 18 REF.Article

A NEW CEO₂ FROM OBTAINED AS OXIDATION PRODUCT OF CEO₂+SIO₂-DOPED HOT-PRESSED SILICON NITRIDECELOTTI G; BABINI GN; BELLOSI A et al.1982; J. APPL. CRYSTALLOGR.; ISSN 0021-8898; DNK; DA. 1982; VOL. 15; NO 1; PP. 55-59; BIBL. 12 REF.Article

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF PLATINUM-SILICIDE-SILICON CONTACTS AS INFLUENCED BY SPACTTER ETCHING AND ANNEALING AMBIENT.SEVERI M; GABILLI E; GUERRI S et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 1998-2003; BIBL. 24 REF.Article

CRYSTAL STRUCTURE OF FORM III OF ISOTACTIC POLY-1-BUTENECOJAZZI G; MALTA V; CELOTTI G et al.1976; MAKROMOLEK. CHEM.; SCHWEIZ.; DA. 1976; VOL. 177; NO 3; PP. 915-926; ABS. ALLEM; BIBL. 21 REF.Article

PREDEPOSITION IN SILICON AS AFFECTED BY THE FORMATION OF ORTHORHOMBIC SIP AND CUBIC SIO₂, P₂O₅ AT THE PSG-SI INTERFACE.SOLMI S; CELOTTI G; NOBILI D et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 5; PP. 654-660; BIBL. 20 REF.Article

Structural data from X-ray powder diffraction for new high-temperature phases (Y_1-xLn_x)₂Si₂O₇ with Ln = Ce, Pr, NdMONTEVERDE, F; CELOTTI, G.Journal of the European Ceramic Society. 2002, Vol 22, Num 5, pp 721-730, issn 0955-2219Article

Features of polycrystalline silicon deposited on dry-pressed mullitic substrates by dipping in a melt for photovoltaic applicationsCELOTTI, G; MORETTINI, L.Materials chemistry and physics. 1984, Vol 10, Num 2, pp 109-118, issn 0254-0584Article

DIRECT X-RAY OBSERVATION OF LATTICE PARAMETER CHANGES DUE TO MAGNETOSTRICTION IN NICKEL SINGLE CRYSTAL.CELOTTI G; VECCHI I; MARTINELLI G et al.1977; J. MATER. SCI.; G.B.; DA. 1977; VOL. 12; NO 12; PP. 2537-2539; BIBL. 13 REF.Article

Structure of the third phase formed on annealing the Hg(1223) superconductor precursor mixture Ba₂Ca₂Cu₃O₇ with Re additionCELOTTI, G; SPRIO, S.Journal of materials science letters. 2002, Vol 21, Num 14, pp 1089-1092, issn 0261-8028Article

Synthesis and densification behaviour of Bi-based superconducting powder by organic precursorTAMPIERI, A; CELOTTI, G.Journal of the European Ceramic Society. 1995, Vol 15, Num 8, pp 735-739, issn 0955-2219Article

CHARACTERIZATION OF TITANIUM NITRIDE FILMS DEPOSITED ONTO SILICONARMIGLIATO A; CELOTTI G; GARULLI A et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 92; NO 4; PP. 341-346; BIBL. 15 REF.Article

CHARACTERIZATION OF TIO_X FILMS AND THEIR APPLICATION AS ANTIREFLECTION COATINGS FOR SILICON SOLAR CELLSARMIGLIATO A; CELOTTI G; GUERRI S et al.1981; SOL. CELLS; ISSN 0379-6787; CHE; DA. 1981; VOL. 3; NO 3; PP. 195-208; BIBL. 28 REF.Article

COMPOUNDS IN THE PD-SI AND PT-SI SYSTEM OBTAINED BY ELECTRON BOMBARDMENT AND POST-THERMAL ANNEALING = COMPOSES DANS LES SYSTEMES PD-SI ET PT-SI OBTENUS PAR BOMBARDEMENT ELECTRONIQUE ET POST-RECUIT THERMIQUEMAJNI G; NAVA F; OTTAVIANI G et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 4055-4061; BIBL. 11 REF.Article

CHARACTERIZATION OF (TI_0.65NB_0.35)O₂ COMPOUND AS A SOURCE FOR TI DIFFUSION DURING TI: LINBO₃ OPTICAL WAVEGUIDES FABRICATIONARMENISE MN; CANALI C; DE SARIO M et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 1; PP. 62-70; BIBL. 33 REF.Article